Notice bibliographique
- Notice
Type(s) de contenu et mode(s) de consultation : Texte noté : électronique
Titre(s) : Oxide and nitride semiconductors [Texte électronique] : processing, properties, and applications / Takafumi Yao, Soon-Ku Hong, (eds.)
Publication : Berlin : Springer, cop. 2009
Description matérielle : 1 ressource dématérialisée
Collection : Advances in materials research ; 12
Note(s) : Includes bibliographical references and index
"This is a unique book devoted to the important class of both oxide and nitride semiconductors.
It covers processing, properties and applications of ZnO and GaN. The aim of this
book is to provide the fundamental and technological issues for both ZnO and GaN.
Materials properties, bulk growth, thin and thick films growth, control of polarity
and application, nonpolar growth, structural defects, optical properties, electrical
properties, nanostructures and the applications, and light emitters based on GaN and
ZnO are treated succinctly. The unique format of touching both materials in each chapter
enables this book to be very fresh, essential, and easy-to-access for readers who
have interests in, and need getting more involved with, the most exciting compound
semiconductors, ZnO and GaN ."--Publisher's website
Autre(s) auteur(s) : Yao, Takafumi (1945-....). Fonction indéterminée
Hong, Soon-Ku. Fonction indéterminée
Sujet(s) : Nitrure de gallium
Semiconducteurs -- Propriétés électroniques
Indice(s) Dewey :
621.397 32 (23e éd.) = Mémoire à semi-conducteurs
Identifiants, prix et caractéristiques : ISBN 9783540888475
Identifiant de la notice : ark:/12148/cb446972454
Notice n° :
FRBNF44697245
(notice reprise d'un réservoir extérieur)
Table des matières : 1 ; Basic Properties of ZnO, GaN, and Related Materials /T. Hanada1.1 ; Introduction
--1.2 ; Crystal Structure --1.2.1 ; Crystal Structure of Related Materials --1.2.2
; Hexagonal Lattice Vectors and Planes --1.3 ; Elastic Strain --1.3.1 ; Elastic Constants
and Elastic Energy Density --1.3.2 ; Strain in Hexagonal- and Cubic-Structure Films
--1.4 ; Electronic Structure --1.4.1 ; Bandgap and Band-Edge Electronic Structure
--1.4.2 ; Bir-Pikus Hamiltonian --1.4.3 ; Valence Band-Edge and Bandgap of Strained
ZnO --1.4.4 ; Exciton Binding Energy --2 ; Solvothermal Growth of ZnO and GaN /D.
Ehrentraut, F. Orito, Y. Mikawa, and T. Fukuda2.1 ; Introduction --2.2 ; Hydrothermal
Growth --2.2.1 ; Hydrothermal Growth Technology for ZnO --2.2.2 ; Growth Mechanism
--2.2.3 ; Liquid Phase Epitaxy and Growth of Microcrystals --2.2.4 ; Properties of
Hydrothermal ZnO --2.2.5 ; Future Developments --2.3 ; Ammonothermal Growth --2.3.1
; A Brief Review of the Growth of GaN Bulk Crystals --2.3.2 ; Ammonothermal Growth
Technology
5 ; Growth of Nonpolar GaN and ZnO Films /S.-K. Hong and H.-J. Lee5.1 ; Introduction
--5.2 ; Polar Surface, Nonpolar Surface, and Heterostructures --5.3 ; Growth of Nonpolar
GaN Films --5.3.1 ; M-plane GaN Films --5.3.2 ; A-plane GaN Films --5.3.3 ; Semipolar
GaN Films --5.4 ; Lateral Epitaxial Overgrowth of Nonpolar GaN Films --5.4.1 ; LEO
of A-plane GaN --5.4.2 ; LEO of M-plane GaN --5.5 ; Growth of Nonpolar ZnO Films --5.5.1
; A-plane ZnO Films --5.5.2 ; M-plane ZnO Films --6 ; Structural Defects in GaN and
ZnO /S.-K. Hong and H.K. Cho6.1 ; Introduction --6.2 ; Dislocation and Stacking Faults
--6.2.1 ; Dislocations --6.2.2 ; Misfit and Threading Dislocations --6.2.3 ; Dislocation
in Wurtzite Structure --6.2.4 ; Stacking Fault in Wurtzite Structure --6.3 ; TEM of
Defects in GaN and ZnO Films --6.3.1 ; Defect Contrast in TEM --6.3.2 ; Analysis of
Threading Dislocation by Cross-sectional TEM --6.3.3 ; Analysis of Threading Dislocation
by Plan-View TEM --6.3.4 ; Misfit Dislocation --6.3.5 ; Nanopipe --6.3.6
