Notice bibliographique
- Notice
Type(s) de contenu et mode(s) de consultation : Texte noté : électronique
Titre(s) : Silicon-germanium strained layers and heterostructures [Texte électronique] / S.C. Jain, M. Willander
Édition : [2nd ed.]
Publication : San Diego, Calif. ; London : Academic, 2003
Description matérielle : 1 online resource (1 texte électronique (xiv, 308 p.))
Collection : Semiconductors and semimetals ; v. 74
Note(s) : Titre de l'écran-titre (visionné le 24 novembre 2011). - Previous edition: published as Germanium-silicon strained layers and heterostuctures
by Suresh C. Jain. Boston: Academic, 1994. - Bibliogr
The study of Silicone Germanium strained layers has broad implications for material
scientists and engineers, in particular those working on the design and modelling
of semi-conductor devices. Since the publication of the original volume in 1994, there
has been a steady flow of new ideas, new understanding, new Silicon-Germanium (SiGe)
structures and new devices with enhanced performance. Written for both students and
senior researchers, the 2nd edition of Silicon-Germanium Strained Layers and Heterostructures
provides an essential up-date of this important topic, describing in particular the
recent developments in technology and modelling. * Fully-revised and updated 2nd edition
incorporating important recent breakthroughs and a complete literature review * The
extensive bibliography of over 400 papers provides a comprehensive and coherent overview
of the subject * Appropriate for students and senior researchers
Autre(s) auteur(s) : Jain, Suresh C. (1926-....)
Willander, M. Fonction indéterminée
Sujet(s) : Hétérostructures
Silicones
Germanium
Semi-métaux
Semiconducteurs
Transistors MOSFET
Composés semiconducteurs
Structure cristalline (solides)
Indice(s) Dewey :
621.381 52 (23e éd.) = Semi-conducteurs
Identifiants, prix et caractéristiques : ISBN 9780127521831
Identifiant de la notice : ark:/12148/cb446394390
Notice n° :
FRBNF44639439
(notice reprise d'un réservoir extérieur)
Table des matières : Introduction; Strain, Stability, reliability and growth; mechanism of strain relaxation;
strain, growth, and TED in SiGeC layers; Bandstructure and related properties; Heterostructure
Bipolar Transistors; FETs and other devices.
