Notice bibliographique
- Notice
Type(s) de contenu et mode(s) de consultation : Texte noté : électronique
Auteur(s) : Brotherton, S.D
Titre(s) : Introduction to Thin Film Transistors [Texte électronique] : Physics and Technology of TFTs / by S.D. Brotherton
Publication : Heidelberg : Springer International Publishing : Springer e-books : Imprint: Springer,
2013
Description matérielle : 1 online resource
Note(s) : Introduction to Thin Film Transistors reviews the operation, application, and technology
of the main classes of thin film transistor (TFT) of current interest for large area
electronics. The TFT materials covered include hydrogenated amorphous silicon (a-Si:H),
poly-crystalline silicon (poly-Si), transparent amorphous oxide semiconductors (AOS),
and organic semiconductors. The large scale manufacturing of a-Si:H TFTs forms the
basis of the active matrix flat panel display industry. Poly-Si TFTs facilitate the
integration of electronic circuits into portable active matrix liquid crystal displays,
and are increasingly used in active matrix organic light emitting diode (AMOLED) displays
for smart phones. The recently developed AOS TFTs are seen as an alternative option
to poly-Si and a-Si:H for AMOLED TV and large AMLCD TV applications, respectively.
The organic TFTs are regarded as a cost effective route into flexible electronics.
As well as treating the highly divergent preparation and properties of these materials,
the physics of the devices fabricated from them is also covered, with emphasis on
performance features such as carrier mobility limitations, leakage currents and instability
mechanisms. The thin film transistors implemented with these materials are the conventional,
insulated gate field effect transistors, and a further chapter describes a new thin
film transistor structure: the source gated transistor, SGT.The driving force behind
much of the development of TFTs has been their application to AMLCDs, and there is
a chapter dealing with the operation of these displays, as well as of AMOLED and electrophoretic
displays. A discussion of TFT and pixel layout issues is also included.For students
and new-comers to the field, introductory chapters deal with basic semiconductor surface
physics, and with classical MOSFET operation. These topics are handled analytically,
so that the underlying device physics is clearly revealed. These treatments are then
used as a reference point, from which the impact of additional band-gap states on
TFT behaviour can be readily appreciated.This reference book, covering all the major
TFT technologies, will be of interest to a wide range of scientists and engineers
in the large area electronics industry. It will also be a broad introduction for research
students and other scientists entering the field, as well as providing an accessible
and comprehensive overview for undergraduate and postgraduate teaching programmes
Sujet(s) : Physique
Électronique
Matériaux optiques
Surfaces (physique)
Indice(s) Dewey :
537.622 (23e éd.) = Semi-conductivité
Identifiants, prix et caractéristiques : ISBN 9783319000022
Identifiant de la notice : ark:/12148/cb44674211p
Notice n° :
FRBNF44674211
(notice reprise d'un réservoir extérieur)
