Notice bibliographique
- Notice
Type(s) de contenu et mode(s) de consultation : Texte noté : sans médiation
Titre(s) : 2D materials for nanoelectronics [Texte imprimé] / edited by Michel Houssa, Athanasios Dimoulas, and Alessandro Molle
Publication : Boca Raton : CRC press, cop. 2016
Description matérielle : 1 vol. (XVI-467 p.) : ill. en coul. ; 24 cm
Collection : Series in materials science and engineering
Lien à la collection : Series in materials science and engineering
Comprend : Theory of the structural, electronic and transport properties of graphene / Massoud
Ramezani Masir, Ortwin Leenaerts, Bart Partoens, and François Peeters ; Epitaxial
graphene: progress on synthesis and device integration / Joshua Robinson, Matthew
Hollander, and Suman Datta ; Metal contacts to graphene / Akira Toriumi and Kosuke
Nagashio ; Graphene for RF analog applications / Max Lemme and Frank Schwierz ;
High-field and thermal transport in graphene / Zuanyi Li, Vincent Dorgan, Andrey Serov,
and Eric Pop ; Theoretical study of transition metal dichalcogenides / Emilio Scalise
; Physico-chemical characterization of MoS2/metal and MoS2/oxide interfaces / Stephen
McDonnell, Rafik Addou, Christopher Hinkle, and Robert Wallace ; Transition metal
dichalcogenide Schottky barrier transistors: a device analysis and material comparison
/ Joerg Appenzeller, Feng Zhang, Saptarshi Das, and Joachim Knoch ; TMD-based photodetectors,
light emitters and photovoltaics / Thomas Mueller ; Optoelectronics, mechanical properties
and strain engineering in MoS2 / Andres Castellanos-Gomez, Michele Buscema, Herre
S.J. van der Zant, and Gary A. Steele ; Device physics and device mechanics for flexible
TMD and phosphorene thin film transistors / Hsiao-Yu Chang, Weinan Zhu, and Deji Akinwande
; Structural, electronic and transport properties of silicene and germanene / Michel
Houssa, Valery Afanas'ev, and André Stesmans ; Group IV semiconductor 2D materials:
the case of silicene and germanene / Alessandro Molle, Dimitra Tsoutsou, and Athanasios
Dimoulas ; Stannene: a likely 2D topological insulator / William Vandenberghe, Ana
Suarez Negreira, and Massimo Fischetti ; Phosphorene: a novel 2D material for future
nanoelectronics and optoelectronics / Yexin Deng, Wei Luo, Han Liu, Yuchen Du, Kun
Xu, and Peide Ye ; 2D-crystal based heterostructures for nanoelectronics / Cinzia
Casiraghi and Freddie Withers.
Note(s) : Notes bibliogr.
"Major developments in the semiconductor industry are on the horizon through the use
of 2D materials such as graphene and transition metal dichalcogenides for integrated
circuits. This book provides the first comprehensive treatment of the field with an
emphasis on applications in nanoelectronic devices. Chapters are divided by the three
major families of such materials, covering graphene for analog and photonic applications,
MoS2 (molybdenum disulfide) for logic applications and novel materials such as silicene,
germanene, stanene and phosphorene"
Autre(s) auteur(s) : Houssa, Michel. Éditeur scientifique
Dimoulas, Athanasios. Éditeur scientifique
Molle, Allesandrio. Éditeur scientifique
Autre(s) forme(s) du titre :
- Autre forme du titre : Two D materials for nanoelectronics
- Autre forme du titre : Two dimensional materials for nanoelectronics
Sujet(s) : Matériaux nanostructurés
Nanoélectronique
Indice(s) Dewey :
620.5 (23e éd.) = Nanotechnologie
Identifiants, prix et caractéristiques : ISBN 978-1-4987-0417-5. - ISBN 1-4987-0417-4 (rel.)
Identifiant de la notice : ark:/12148/cb45022897g
Notice n° :
FRBNF45022897
(notice reprise d'un réservoir extérieur)
